Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization

ABSTRACT

A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a magnet pack attached thereto said yoke such that the magnet pack is adapted to being moved over a target material and wherein the target material is being sputtered within a vacuum chamber onto a substrate.

FIELD OF THE INVENTION

The present invention relates generally to sputtering, and moreparticularly to a linear moving magnetron sputtering cathode, whichsweeps a magnetron plasma across a target face, incorporated in a batchscanning sputter tool, for achieving nearly full-face or full-face,uniform target erosion that results in arc-free reactive deposition andhigh, or total, target utilization.

BACKGROUND OF THE INVENTION

Thin dielectric films are utilized in a wide variety of deviceapplications, ranging from protective layers in semiconductor circuits,computer read-write heads, magnetic media, and displays, to componentsin optical waveguides, mirrors, filters and switches. What is commonabout all these applications is that these dielectric layers must be asfree from defects as possible so that they provide a high level ofinsulation between current-carrying conductors sandwiched around them.

For many applications fairly thick (several microns) dielectric filmsare required, so it is desirable to have a production-worthy depositionscheme that will be capable of producing high quality dielectric filmsat high rates. Traditionally, RF diode or RF magnetron sputtering frominsulating targets is used for dielectric coating. However, thedeposition rates afforded by such techniques is extremely low, and itcan take several hours to deposit even a relatively thin film. Anotherdisadvantage of RF sputtering is that the process is very hot, and candamage fragile substrates.

DC reactive magnetron sputtering from metallic targets is an excellentway of boosting dielectric deposition rates. Advantages of thistechnique over RF include 1) 5-10 times higher rates, 2) coolerprocesses, 3) less flaking from metallic targets, leading to lowerdefect densities on the substrate, provided arcing is well-suppressed,and 4) simpler and less expensive power supplies. The main disadvantageis that, for a magnetron cathode which has a limited area of erosion, DCreactive sputtering leads to dielectric layer buildup on areas of thetarget that are not eroded. This in turn leads to arcing, particles anddefect formation in the deposited films. An advanced arc-suppressionscheme, such as that utilized in Advanced Energy's Pinnacle Plusswitching power supply, needs to be used for DC reactive deposition ofdielectric films from conventional cathodes. However, such powersupplies approach the expense and complexity of a RF scheme.

It is, therefore, critically important in DC reactive deposition ofdielectric films to have a cathode that provides full-face erosion ofthe target surface. A moving magnetron cathode is one of the best waysof achieving such full-face erosion. An example of such a cathode thathas been successfully utilized for arc-free DC reactive deposition ofdielectric films is S. Hurwitt's U.S. Pat. No. 5,130,005, whichdescribes a rotating magnetron scheme for a circular cathode. However,this cathode cannot be utilized in a scanning, in-line batch tool.Another moving magnetron patent has been issued to McKelvey in U.S. Pat.No. 4,422,916, which describes a rotating cylindrical magnetron. Thedisadvantage of this type of cathode is that it is very difficult tofabricate cylindrical targets from brittle materials. A rectangularplanar magnetron with a moveable magnet assembly is known from U.S. Pat.No. 4,444,643, in which the magnetic assembly is translated laterallyand parallel to the major axis of the target. DE-A-27 07 144 proposes amagnet assembly which is swept over a rectangular target along a linearpath. U.S. Pat. No. 4,714,536 proposes that the magnet assembly is movedwith a non-repetitive small epicycloidal motion distributed over thearea of the target. U.S. Pat. No. 5,188,717 explains that even erosionof the target can be obtained when the dwell time of the magnetic fluxremains equal over each unit area of the target and proposes a specificshape to the magnet assembly. U.S. Pat. No. 5,382,344 describes a magnetassembly which produces electron paths in a plurality of racetrackswhich are moved linearly and perpendicularly to the longest axis of thetarget with an oscillatory motion. EP-A-416 241 describes a magnet arraywhich may be moved in an oscillating motion limited by the cathode tray,the motion being produced by a pin on a rotating cam, the pin beingjournalled in the base of the rotating cam. U.S. Pat. No. 5,328,585describes a linear planar-magnetron cathode with a reciprocating magnetarray, where the reciprocating motion can be simultaneously lateral andlongitudinal with respect to the cathode. U.S. Pat. No. 5,833,815proposes reciprocating motions parallel to the substrate movingdirection and at an angle thereto. U.S. Pat. No. 5,417,833 discussesprevious attempts to achieve full target erosion, and combines arotating permanent magnet array with an stationary electromagnet. Thisscheme is extremely complex and difficult to apply to a wide range ofapplications. U.S. Pat. No. 6,494,999 describes a magnetron cathodeassembly that can be scanned over the target assembly, independent ofvacuum or vacuum components. The target assembly includesheating/cooling passages and a heat exchanger/pressure relieving plate.The patent describes much more about the integral cooling and pressurerelief mechanism than the actual magnet design and performance of thecathode. U.S. Pat. No. 6,416,639 reviews most of the aforementionedpatents and describes a technique for combining a moving magnet arraywith fixed ferromagnetic pole pieces to smooth out the erosion profile.

The object of the present invention is to provide a simple, practicaland effective means of achieving near-complete target erosion over arectangular cathode in an in-line batch sputtering system. This meansshould be applicable to a wide range of target materials and processes.In particular, DC reactive sputtering of dielectrics should be easilyeffected without recourse to expensive and complex arc-suppressioncircuitry. Target utilization should be over 70%, thus providing acost-effective solution for the use of precious metal and otherexpensive targets.

OBJECTS OF THE INVENTION

It is an object of the present invention to provide a magnetronsputtering device that will allow for full-face target erosion in asputter deposition plasma process.

It is an object of the present invention to provide a magnetronsputtering device that will allow for arc-free DC reactive deposition ofinsulative and dielectric films.

It is an object of the present invention to provide a magnetronsputtering device that will allow for longer target life.

It is an object of the present invention to provide a magnetronsputtering device that will allow for uniform target erosion.

It is an object of the present invention to provide a magnetronsputtering device that will yield more consistent performance insputtering plasma deposition processes.

It is another object of the invention to provide a magnetron sputteringdevice that creates more complete target erosion and significantlygreater target usage, to reduce the incidence of replacement.

It is a further object of the invention to provide a magnetronsputtering device that employs a dynamic magnet array.

It is another object of the invention to provide a magnetron sputteringdevice that creates more complete target erosion through a sweepinglinear magnetic array.

It is still another object of the invention to provide a magnetronsputtering device that creates more complete target erosion through asweeping linear magnetic array coupled with edge shunts.

It is an object of the invention to provide a magnetron sputteringdevice that would broaden the race-track erosion pattern of the priorart systems.

It is a further object of the invention to provide a magnetronsputtering device that would compensate for the end edge erosion of theprior art devices.

It is another object of the invention to provide a magnetron sputteringdevice that incorporates shunt patches to evenly distribute targeterosion over the end edges of a target.

It is an object of the invention to provide a magnetron sputteringdevice that moves linearly in a plane, or planes, on, or along, axes ofthe target.

SUMMARY OF THE INVENTION

The present invention is directed to a sputtering device such as amagnetron assembly that will provide for more nearly complete, tocomplete, uniform target erosion than heretofore has been achieved byprior art systems. In one embodiment of the present invention themagnetron can be in the form of a linear assembly. The linear magnetronmay consist of a generally rectangular magnet pack. The magnet pack canbe a relatively small, three-dimensional rectangular unit. While casthollow, the magnet pack may be filled with smaller magnets. The magnetorientation, shape, and size may be varied in conjunction with the sizeand shape of the pack.

The magnet pack may be placed in a casing. The casing should be largeenough so that the magnet pack will be able to move in a planecompletely over the target backing. A frequency actuator or motor maygenerate the sweeping motion of the magnet pack. However, it ispreferable that the range of motion be limited in both directions off acentral axis to limit or reduce the risk of secondary plasmas in thetarget shield area. Also, the movement can be in two planes:front-to-back (across the width), or side-to-side (across the length).The movement may be determined by the size and shape of the target.Additionally, the actuator may allow for vertical plane movement of themagnet pack within the casing. However, it is preferable that themovement be restricted to that in a horizontal plane. Movement in avertical plane may create plasma gaps, which could lead to non-uniformtarget erosion patterns.

The horizontal sweep by the magnet pack over the target backing willprovide more uniform target erosion overall. While, the instantaneousposition of the magnet pack will focus collisions on that respectivepart of the target material, the constant sweeping will spread thecollisions in a shaving pattern, such as slicing. In addition, thecasing may contain short edge shunts to minimize the erosion changeacross the target surface. The short edge shunts are preferably placedat each end of the rectangular casing.

The present invention also includes in the sputtering system described,means to scan substrates past the moving magnetron cathode at a range ofspeeds. The magnetron array can be moved at frequencies up to about 70rpm, which translates into a maximum speed of about 700 cm/min. A batchpallet holding the substrates in the sputtering tool can be scanned atspeeds ranging from about 1 cm/min to about 800 cm/min.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a sweeping linear magnetron cathode according tothe present invention.

FIG. 2 is a transverse, cross-sectional view of the sweeping linearmagnetron cathode shown in FIG. 1.

FIG. 3 is a longitudinal, cross-sectional view of the sweeping linearmagnetron cathode shown in FIGS. 1 and 2.

FIGS. 4A, 4B, and 4C show the end, top and cross-sectional views,respectively, of representative magnetron packs used in the presentinvention.

FIG. 5 shows the measured magnetic field at the surface of the target inthe center of the erosion zone with the magnet pack shown in FIG. 4A-4Cheld stationary in its center position. The measured magnetic field of astandard conventional planar cathode is also shown in this plot forcomparison.

FIG. 6A shows the lengthwise cross-sectional view of the target erosionprofile for a prior art magnet pack. FIG. 6B shows the comparativelengthwise cross-sectional target erosion profile for the presentembodiment of the sweeping linear magnetron cathode.

FIG. 7A shows the end view cross-section of the target erosion profilefor a prior art magnet pack. FIG. 7B shows the comparative end viewcross-section of the target erosion profile for the present embodimentof the sweeping linear magnetron cathode.

FIG. 8 illustrates a plan view of an alternative embodiment of themagnetron drive mechanism.

FIG. 9 illustrates a cross-sectional view of the alternative drivemechanism shown in FIG. 8.

FIG. 10 illustrates the batch sputtering tool of the present invention.

FIG. 11 shows representative film uniformity profiles over a 12″×12″area for aluminum sputtered using the sweeping linear magnetron cathode.

FIG. 12 shows representative film uniformity profiles over a 12“×12”area for aluminum oxide sputtered using the sweeping linear magnetroncathode.

FIG. 13 shows a typical hysteresis loop for aluminum oxide sputteredwith the sweeping linear magnetron cathode.

FIG. 14A shows a simulated step coverage profile of RF magnetronsputtered SiO2, with a poor step coverage of less than 30%.

FIG. 14B shows a scanning electron micrograph of an actual step coverageprofile of DC reactively sputtered SiO2, with excellent step coverage ofabout 60%.

REFERENCE NUMERAL DESIGNATIONS

-   100 Linear Magnetron-   1 Magnet Pack-   1A Orifices-   1B Outside Surface-   1C Cut-Out-   2 Cathode Backing Plate-   3 Drive Housing-   4 Water Manifold Mounting Bracket-   5 Water Manifold Mounting Bracket-   6 Motor-   6A Energy Supply-   6B Motor Shaft-   7 Motor Insulator-   8 Ground Clip-   9 Ground Strap-   10 Bearing Support Plate-   11 Linear Block Bearings-   11A Linear Block Bearings-   12 Dark Space Shield-   13 Target-   14 Fluid Passage-   15 Intake Manifold-   15A Pipe-   16 Outlet Manifold-   16A Pipe-   17 Eccentric Drive Shaft-   18 Eccentric Drive Plate-   19 Yoke-   20 Bearing Mounting Bracket-   21 Air Cylinder-   22 Air Cylinder Mounting Bracket-   23 Pneumatic Valve-   24 Magnet Mounting Plate-   25 Target Erosion Profile-   26 Stroke Sensor-   27 Flow Controls-   28 Timing Belt-   29 Chamber Top Plate-   30 Enclosure-   31 Cathode Insulator-   32 Cooling Fins-   33 Pump-   34 Vacuum Chamber-   35 Magnetron Assembly-   36 Substrate Carrier-   37 Throttle Valve-   38 Controller-   39 Process Gas-   40 Plasma-   41 Target Mounting Surface-   42 End Magnets-   43 Pulley-   44 Mounting Surface on Cathode Backing Plate-   45 Erosion Linear Region-   46 Erosion End Region-   47 Screw-   48 Insulator-   49 Washer-   50 Insulator Bushing-   51 Screw-   51A Washer-   52 Drive Pulley-   53 Duplex Bearing-   54 Bearing Clamp-   55 Bearing Lock-   56 Eccentric-   57 Eccentric Shaft-   58 Radial Bearing-   59 Bearing Rail Mount-   59A Bearing Rail Mount-   60 End Surface of Magnet Pack-   61 Bearing Rail Mount-   62 Bearing Rail Mount-   63 Linear Rail Bearing-   64 Linear Rail Bearing-   65 Bearing Block Mount-   66 Bearing Block Mount-   67 Air Gap-   69 Side Magnets-   70 Center Line-   71 Center Magnets-   72 Filler Magnets-   73 End of Magnet Pack-   74 Base Edge of Magnet Mounting Plate-   75 Base Edge of Magnet Mounting Plate-   76 Side Edge of Magnet Mounting Plate-   77 Side Edge of Magnet Mounting Plate-   78 Diagonal Edge of Magnet Mounting Plate-   79 Diagonal Edge of Magnet Mounting Plate-   80 Diagonal Edge of Magnet Mounting Plate-   81 Diagonal Edge of Magnet Mounting Plate

DETAILED DESCRIPTION OF THE INVENTION

One embodiment of the present invention, an improved linear magnetronassembly for uniform target erosion, is depicted in FIG. 1. The linearmagnetron 100 includes a cathode backing plate 2. The cathode backingplate 2 may be in the form of a copper plate, or manufactured fromanother suitable substance with similar electrical and thermalconductivity characteristics. Preferably, the cathode backing plate 2may have terminals (not shown) for receiving an electric current. Thelinear magnetron assembly 100 should be adapted to be attached to achamber top plate 29, which can be the top surface of a vacuum chamber34 wherein the plasma deposition process will occur.

The cathode backing plate 2 may have a plurality of orifices 1A forreceiving a bolt or other securing means positioned at various locationsaround the perimeter. These orifices around the cathode backing plate 2are for securing the cathode backing plate 2 to a cathode insulator 31.Alternatively, the cathode backing plate 2 may be otherwise secured tothe cathode insulator 31. Preferably, the cathode insulator 31 isattached to the top of the vacuum chamber by a screw 47, insulator 48,and washer 49 assembly. The insulator may be coupled with an insulatorbushing 50 to effectively seal the cathode backing plate 2 to thecathode insulator 31, which provides electrical insulation.

On the outside surface 1B of the cathode backing plate 2 a drive housingmay be positioned over a cut-out. The cut-out preferably has a generallyrectangular configuration to allow for sweeping of the linear magnetronin a horizontal plane within the cut-out. The drive housing ispreferably immovably attached to outside surface 1B by a screw 51 andwasher 51A. The drive housing 3 can hold a motor 6. The motor 6 shouldhave an energy supply. A motor insulator is preferably attached to themotor for electrical isolation. In another embodiment, the motor may bereplaced with a frequency actuator or other device that convertselectronic commands into mechanical operations. As seen more clearly inFIG. 10, motor 6 can connect to a controller 38. The controller 38 maybe programmed to maintain linear velocity of the magnet pack across thewidth and/or length of the target. Referring again to FIG. 1, groundclip 8 can maintain the eccentric drive shaft 17 and magnet pack 1 atequal voltage potentials. Ground strap 9 attached to bearing supportplate 10 and magnet pack 1 maintains the magnet pack and cathode backingplate 2 at equal voltage potentials. This eliminates current flow in anyof the above components and, in turn, eliminates heating of the magnetpack. It is important not to generate heat in the magnet pack as themagnet strength degrades with an increase temperature.

As seen in FIG. 3, in a preferred embodiment of the invention, when themotor 6 is activated, the motor shaft 6B turns a pulley 43. As thepulley 43 rotates, it turns a drive pulley 52 by means of a belt such asa timing belt 28. The drive pulley 52 can be attached to an eccentricdrive shaft 17. The eccentric drive shaft 17 can be housed in a duplexbearing 53, which, in turn, is attached to the drive housing 3 bybearing clamp 54. Eccentric drive shaft 17 can have a varied rotationspeed, but is preferably in the range of about 1 to 68 revolutions perminute (rpm). This rate can translate to a linear travel speed of themagnet pack 1 from about 10 cm/min to about 700 cm/min. On the uppermostportion of the eccentric drive shaft 17 can be a bearing lock 55. Theduplex bearing 53 facilitates linear motion of the magnetron. Thebearing lock 55, which may be a nut, allows the magnetron to move only afixed distance off axis, in either direction.

The end of eccentric drive shaft 17 opposite the duplex bearing 53 canbe fixed to an eccentric 56 housed in an eccentric drive plate 18. Asthe eccentric drive shaft 17 rotates, the eccentric 56 rotates. Theeccentric 56 has a shaft 57, which is fixed to it. The free end of theshaft 57 is housed in a radial bearing 58. A reciprocating motionresults when the shaft 57 rotates around the axis of the eccentric 56.The radial bearing 58 facilitates this reciprocating motion. The radialbearing 58 is immovably attached to a yoke 19. The yoke 19, in turn, isimmovably attached to a magnet pack 1. Thus, upon activation of themotor 6, the magnet pack will be moved in a reciprocating motionback-and-forth, sweeping over the target 13. The linear sweeping motionof the magnet pack 1 will provide a more uniform erosion of the target13. Specifically, the movement of the entire magnet pack will focusionized gas atoms at the end edges of the target 13, effectivelyreducing the race-track erosion effect found in the prior art.

While reciprocating movement may tend to produce non-linear travel, themagnet pack 1 is preferably restricted to linear movement. Attached tothe cathode backing plate 2, stretching over cut-out 1C are bearing railmounts 59 and 59A. The bearing rail mounts 59 may be immovably fixed tothe cathode backing plate 2. Attached to the end surface 60 of themagnet pack 1 are bearing rail mounts 61 and 62. On top of bearing railmounts 61 and 62 are linear block bearings 11 and 11A, respectively. Thelinear block bearings 11 and 11A are immovably fixed to the bearing railmounts 61 and 62, respectively. Linear rail bearings 63 and 64 areimmovably fixed to bearing block mounts 65 and 66, respectively. Thelinear rail bearings fit within the linear block bearings, providing alinear, relatively frictionless motion for the magnet pack.

Additionally FIG. 3 shows the method of attachment of the presentinvention to a vacuum chamber. A mounting surface 44 on the cathodebacking plate 2 can be the contact point for mounting the present deviceon a vacuum chamber 34. Mounting surface 44 can sit on an insulator 31,which can electrically isolate the present device from the vacuumchamber 34. When the vacuum chamber 34 is evacuated, the space abovemounting surface 44 is preferably at atmospheric conditions, while thespace below, the chamber, is at vacuum conditions.

As seen in FIG. 2, directly beneath the magnet pack 1 is an air gap 67.The air gap 67 between the magnet pack 1 and the bottom of the cathodebacking plate 2 allows for generally frictionless movement. Beneath thebottom of the cathode backing plate 2 can be a fluid passage 14. Thefluid passage 14 allows for the passage of a cooling liquid, preferablywater, from an intake manifold 15 to an outlet manifold 16 which areequipped with shut-off valves. Manifolds 15 and 16 are attached to waterpipes 15A and 16A, respectively. The circulation of water is used tokeep the target material cool. A flow of cooling liquid across a surfaceof the target material and cathode backing plate can remove heatgenerated during the sputtering process. Fluid passage 14 is preferablyengineered to maintain a turbulent flow of cooling liquid. Increasedtemperature around the target material may cause unpredictable changesin the properties of the plasma as well as an increased number of ioncollisions with the target. These increased collisions may bedetrimental if the coating requires a semi-controlled plasmaenvironment. Also seen in FIG. 2 is a dark space shield 12. Dark spaceshield 12 surrounds cathode backing plate 2 and is used to avoid thegeneration of unwanted plasma at the sides of the target area bymaintaining the integrity of the magnetic field.

Beneath fluid passage 14 may be the target material 13, or a targetmounting surface 41 with the target material 13 on its bottom surface.Target material 13 may be a non-magnetic metal, magnetic metal, boron-or phosphorus-doped silicon or other semiconductor, or transparentconductive oxide to be deposited reactively or non-reactively on asubstrate. Target material 13 can be fastened to cathode backing plate 2with known soldering techniques or bolted using an appropriate heattransfer medium placed between the target and the backing plate.

FIGS. 4A, 4B and 4C present a more detailed view of the magnet pack 1 ofthe present invention. In the prior art magnet packs magnets may bepresent on only a portion of the pack. In the present invention, themagnet pack 1 can have a magnet mounting plate 24 and a second magnetmounting plate (not shown) similar in shape to the magnet mounting platethat goes over the magnet mounting plate and the magnets containedtherein thereby forming generally a sandwich effect. Preferably, themagnet mounting plate 24, and second magnet mounting plate arenon-ferrous. Magnet mounting plate 24 can be provided with cooling fins32. Cooling fins 32, along with ground clip 8 and ground strap 9 canmaintain the magnet pack 1 temperature below 80 degrees Fahrenheitduring the sputtering process.

In FIG. 4B, the second magnet mounting plate has been removed for easeof viewing. The magnet mounting plates may be oriented in a parallelmanner that will form a casing with magnets bonding them together. Asseen in FIG. 4B, there is lining the edges of the magnet mounting plate24 are side magnets 69. Along the center line 70 of the magnet mountingplate 24 are center magnets 71. Between the center magnets 71 and sidemagnets 69 can be filler magnets 72. The filler magnets 72 can be usedto provide continuity and control to the magnetic field generated by theother positioned magnets.

The center magnets 71, the side magnets 69 and the filler magnets 72 cancover a portion of the surface of the magnet mounting plate 24. In orderto improve the sputtering and reduce the non-uniform erosion, it hasbeen found that even more magnets are desirable. A plurality ofindividual magnets can be bonded to one of the magnet mounting plates inan arrangement such that as much of the surface of the magnet mountingplate as possible has been provided with a magnet for at least a portionof the time during operation. Alternatively, solid, larger magnets maybe used that will perform the same function as the plurality ofindividual magnets. End magnets 42 may be used at the ends 73 of themagnet pack 1. The end magnets 42 may be preferably positioned in anarrangement that is similar to an arc on ends 73 of the magnet pack 1.Alternatively, the end magnets 42 can be arranged in a squared manneralong the edge of the magnet mounting plate 24. The end magnets 42 willact as a shunt for the magnetic flux.

As seen in FIGS. 4A, 4B and 4C there is a representative example of amagnet mounting plate 24 that has a first base edge 74 and a second baseedge 75. These edges may be parallel to each other if desired. The baseedges 74 and 75 may be connected by generally perpendicular side edges76 and 77. In one embodiment as seen in FIG. 4B, the side edges have oneor more diagonal edges 78, 79, 80, and 81. Although the magnet mountingplate has been shown with a particular configuration, it will beappreciated that the magnet mounting plate can be other convenientshapes including but not limited to curved side edges, combinations ofcurved and straight edges or combinations of curved edges. It will alsobe appreciated that the arrangement of the magnets will vary dependingon the shape of the magnet mounting plate. For the most part there willbe center magnets 71, side magnets 69 and the filler magnets 72 thatcover a major portion of the surface of the magnet mounting plate aswell as one or more end magnets 42 that conform in either shape orlayout to most of the remaining area of the magnet mounting plate thatcovers the portion of the target that is subject to the sputtering. Theend magnets reduce the need for the entire working surface of the magnetmounting plates to be covered with magnets. Although, if desired, theregions that do not have any magnets attached may also be provided withfiller magnets was well. Thus, when the magnet pack 1 sweeps over thetarget material, the end magnets provide a means to effect erosion onthe end edges of the target and eliminate the race track erosion seen inthe prior art devices. Without the end magnets, the target may erode inits center, but not along its edges. This non-uniform erosion of theprior art is deleterious to the overall sputtering process and increasethe risk that costly targets may have to be replaced more often.

As seen in FIG. 4A, the polar orientation of the end magnets 42, sidemagnets 69, center magnets 71 and filler magnets 72 should be such thatwill provide a relatively uniform magnetic field, thereby increasingfrequency of contact between ionized gas atoms and the target material.Preferably, the end magnets 42 will be fixed to the magnet mountingplate 24 with their south poles facing the target. Additionally, in apreferred embodiment, the side magnets 69 will have their north polesface the target; the center magnets 71 will have their south poles facethe target. The filler magnets 72 may be oriented such that their northpoles contact the side magnets 69, while their south poles contact thecenter magnets 71. These preferred polar orientations should provide amagnetic field that will increase the amount of plasma ion collisionswith the target material thereby increasing the amount of sputteredmaterial. Additionally, the sweeping motion of the magnet pack 1 willmove that magnetic field over the entire target, thereby causing theerosion pattern to be uniform.

As seen in FIG. 1, the magnet pack 1 is confined to movement withincut-out 1C. The range of motion of the magnet pack may be maintained toprevent formation of secondary plasma gaps in the target shield area.Secondary plasma gaps contribute to non-uniform erosion. Also, shortedge shunts (not shown) may be placed along the end edges of cut-out 1C.Short edge shunts may maintain a constant magnetic field over theproblematic end edges of the target area. Thus, the sweeping movement ofthe magnet pack 1 and positioning of short edge shunts can lead touniform erosion along the end edges of the target area. Additionally,short edge shunts may be semicircular or any shape that will conform tothe cut-out 1C including along the edges of cut-out 1C. Short edgeshunts may be placed at both ends of the cut-out 1C.

FIG. 5 shows a plot of the average measured magnetic field in the centerof erosion for a static magnetron, as used in the prior art, comparedwith a the average measured magnetic field in the center of erosion forthe sweeping linear magnetron of the present invention. In FIG. 5, thepresent magnetic field was measured with the magnet pack of the presentinvention held centered and stationary over the target material. Theconfiguration of the magnets within the magnet pack alone provides agreater magnetic field strength than that generated by the prior artmagnetrons.

FIG. 6A illustrates a target erosion profile for a magnetron with astatic magnet pack as taught by the prior art. The racetrack feature ofthe prior art is depicted as erosion linear region 45. FIG. 6Billustrates a target erosion profile for the sweeping linear magnetronin accordance with the present invention. FIG. 6B also illustrates theelimination of cusping and broadening of the erosion area on the surfaceof the target when the sweeping linear magnetron of the presentinvention is used.

FIG. 7A shows the erosion profile at the end (turn around) of amagnetron using a static magnet pack as taught in the prior art. Anerosion end region 46, which is a part of the racetrack pattern problemof the prior art, is shown in FIG. 7A. FIG. 7B shows the erosion profileat the end of a magnetron using the sweeping linear magnetron used inaccordance with the present invention. Comparing FIGS. 7A and 7B, it canbe seen that the target is eroding at a higher rate at its ends in thestatic configuration of the prior art. A higher erosion rate will leadinevitably to more frequent target material replacements and highercosts.

Another embodiment of the present invention is illustrated in FIGS. 8and 9. An air cylinder 21 can replace a motor and be used to generatethe reciprocating motion required to drive the magnet pack 1 across thewidth and/or length of the target. Air cylinder 21 can be mounted tomagnet pack 1 and mounting brackets 22. Pneumatic valve 23 can bemounted directly to the air cylinder 21 and used to move the magnet pack1 linearly. Pneumatic valve 23 can be interchangeable with a solenoid.As seen in FIG. 9, a stroke sensor 26 can cause pneumatic valve 23 toshift, reversing the direction of the magnet pack 1. The linear speed ofthe magnet can be adjusted using flow controls 27.

FIG. 10 illustrates a magnetron assembly in a batch deposition tool. Inthis embodiment, a plurality of magnetron assemblies 35 is positioned inseries in a vacuum chamber 34. A substrate carrier 36 can carry asubstrate through the vacuum chamber 34 and through the plasma.

FIG. 11 plots uniformity profiles for aluminum sputtered with thesweeping linear magnetron cathode of the present invention under avariety of process conditions. Film uniformity over a 12″×12″ area is inthe range of about +/−3-5%, heretofore achieved only by the use ofuniformity shapers or a complex planetary motion of the wafers.Furthermore, this uniformity and rate will remain constant through lifebecause of the full erosion of the target face.

FIG. 12 plots uniformity profiles for aluminum oxide sputtered DCreactively with oxygen and argon from an aluminum target using thesweeping linear moving magnetron cathode under a variety of processconditions. The absence of target poisoning due to the nearly full-facetarget erosion leads to arc-free deposition of a wide range ofdielectric films from elemental targets. It is not necessary to usecomplex and expensive arc-suppression schemes such as the AdvancedEnergy® Pinnacle® Plus power supply when using the sweeping linearmagnetron cathode of the present invention for reactive sputtering, ascompared with a static planar magnetron cathode of the prior art. Theuniformity of these reactively-deposited films is also excellentcompared to those that are RF sputtered from compound targets, less thanabout +/−5% as compared with over 10%, typically.

Films can be sputtered at about 5-10 times higher rates thanRF-sputtered films from dielectric targets because of the wider powerrange available for DC supplies, as well as the ability of metallictargets to withstand higher power densities than dielectric targets.So-called “metal-rate processes” which utilize the high rate window ofthe process hysteresis loop shown in FIG. 13 boost the deposition rateseven higher.

An additional benefit of DC reactive processing is that the stepcoverage achieved is significantly improved over a non-reactivedeposition, from about 30% to over 60%. This is due to the fact that thefilm formation is not determined solely due to the geometricalconfiguration, but also derives from local reaction at the substratesurface, which lends it more conformality than conventional RFsputtering, somewhat similar to that in chemical vapor deposition.Geometrical factors in the target placement relative to the substrateprimarily determine step coverage in standard sputtering, resulting intypically poor step coverage of 30% or less unless heat and/or ionbombardment (bias sputtering) is used to reshape the contours. In DCreactive sputtering, as that contemplated by the present invention,there is an intrinsic conformality in the film formation, resulting instep coverage of about 60%.

FIG. 14A shows a theoretical simulation of an insulating film such assilicon dioxide or aluminum oxide, conventionally deposited by RFsputtering from a compound target, exhibiting the poor step coveragetypically seen in the prior art. FIG. 14B shows a scanning electronmicrograph of a DC reactively deposited SiO2 film with conformal stepcoverage as taught by the present invention.

1. A sweeping linear magnetron comprising a cathode backing plate, saidcathode backing plate having an exterior surface adapted to be attachedto a vacuum chamber wherein a plasma deposition process will occur; adrive housing attached to said exterior surface of said cathode backingplate, said drive housing positioned over a cut-out in the surface ofsaid cathode backing plate; a motor held in said drive housing, saidmotor driving a yoke, said yoke positioned within said cut-out in saidsurface of said cathode backing plate; a magnet pack, said magnet packattached to said yoke, said magnet pack having a first magnet mountingplate and a second magnet mounting plate that goes over the first magnetmounting plate and a plurality of magnets positioned between said firstmagnet mounting plate and said second magnet mounting plate, said magnetpack having between the first magnet mounting plate and the secondmagnet mounting plate one or more center magnets having a first end anda second end and a body between said first end and said second end andone or more side magnets having a first end and a second end and a bodybetween said first end and said second end, the bodies of said centermagnets and said side magnets generally positioned in the same alignmentso that their ends do not contact each other and one or more end magnetsone the magnet mounting plates in an area of the magnet mounting platesthat extends past the ends of the center and side magnet; one or morefiller magnets are positioned between the center magnets and the sidemagnets and said magnet pack being moved over a target material, saidtarget material being sputtered within said vacuum chamber onto asubstrate.
 2. The magnetron according to claim 1 wherein the magnetmounting plates have at least one side edge and at least one end edge,and said side magnets are positioned along said side edge and said endmagnets are positioned along said end edge.
 3. (canceled)
 4. Themagnetron according to claim 2 wherein one or more end magnets extendfrom one end of one side magnet to one end of a second side magnet. 5.The magnetron according to claim 4 wherein one or more end magnets forman arc that extends from one end of one side magnet to one end of asecond side magnet along the end edge of said magnet mounting plates.6-10. (canceled)
 11. The magnetron according to claim 1 wherein saidmagnet pack moves linearly across a width of said target material. 12.The magnetron according to claim 1 wherein said magnet pack moveslinearly across a length of said target material.
 13. The magnetronaccording to claim 1 wherein said motor is a frequency actuator.
 14. Themagnetron according to claim 1 wherein said motor is an air cylinder.15. (canceled)
 16. (canceled)
 17. An improved magnetron comprising: acathode backing plate, said cathode backing plate attaching to a vacuumchamber wherein a plasma deposition process can occur; a magnet packpositioned within a cut-out in said cathode backing plate, said magnetpack adapted to move within said cut-out; a means to move said magnetpack within said cut-out; and a target material, said target materialbeing on a side of said cathode backing plate in said vacuum chamber,said magnet pack moving over said target material to alter a magneticfield created by said magnet pack, said magnetic pack having one or morecenter magnets and one or more side magnets, and wherein one or morefiller magnets are positioned between the center magnets and the sidemagnets.
 18. A magnet pack for use in a plasma deposition processcomprising: a first magnet mounting plate; a second magnet mountingplate that goes over the first magnet mounting plate; and a plurality ofmagnets positioned between said first magnet mounting plate and saidsecond magnet mounting plate, said magnet pack having between the firstmagnet mounting plate and the second magnet mounting plate one or morecenter magnets having a first end and a second end and a body betweensaid first end and said second end and one or more side magnets having afirst end and a second end and a body between said first end and saidsecond end, the bodies of said center magnets and said side magnetsgenerally positioned in the same alignment so that their ends do notcontact each other and one or more end magnets one the magnet mountingplates in an area of the magnet mounting plates that extends past theends of the center and side magnet.
 19. A target material uniformlyeroded by a device, said device comprising a cathode backing plate, saidcathode backing plate having an exterior surface adapted to be attachedto a vacuum chamber wherein a plasma deposition process will occur; adrive housing attached to said exterior surface of said cathode backingplate, said drive housing positioned over a cut-out in the surface ofsaid cathode backing plate; a motor held in said drive housing, saidmotor driving a yoke, said yoke positioned within said cut-out in saidsurface of said cathode backing plate; a magnet pack, said magnet packattached to said yoke, said magnet pack having a first magnet mountingplate and a second magnet mounting plate that goes over the first magnetmounting plate and a plurality of magnets positioned between said firstmagnet mounting plate and said second magnet mounting plate, said magnetpack having between the first magnet mounting plate and the secondmagnet mounting plate one or more center magnets having a first end anda second end and a body between said first end and said second end andone or more side magnets having a first end and a second end and a bodybetween said first end and said second end, the bodies of said centermagnets and said side magnets generally positioned in the same alignmentso that their ends do not contact each other and one or more end magnetsone the magnet mounting plates in an area of the magnet mounting platesthat extends past the ends of the center and side magnet; and saidmagnet pack being moved over a target material, said target materialbeing sputtered within said vacuum chamber onto a substrate. 20-31.(canceled)
 32. A film formed by a sweeping linear magnetron saidmagnetron comprising a cathode backing plate, said cathode backing platehaving an exterior surface adapted to be attached to a vacuum chamberwherein a plasma deposition process will occur; a drive housing attachedto said exterior surface of said cathode backing plate, said drivehousing positioned over a cut-out in the surface of said cathode backingplate; a motor held in said drive housing, said motor driving a yoke,said yoke positioned within said cut-out in said surface of said cathodebacking plate; a magnet pack, said magnet pack attached to said yoke,said magnet pack having a first magnet mounting plate and a secondmagnet mounting plate that goes over the first magnet mounting plate anda plurality of magnets positioned between said first magnet mountingplate and said second magnet mounting plate, said magnet pack havingbetween the first magnet mounting plate and the second magnet mountingplate one or more center magnets having a first end and a second end anda body between said first end and said second end and one or more sidemagnets having a first end and a second end and a body between saidfirst end and said second end, the bodies of said center magnets andsaid side magnets generally positioned in the same alignment so thattheir ends do not contact each other and one or more end magnets one themagnet mounting plates in an area of the magnet mounting plates thatextends past the ends of the center and side magnet; and said magnetpack being moved over a target material, said target material beingsputtered within said vacuum chamber onto a substrate.